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| savantic semiconductor product specification silicon npn power transistors buw12 BUW12A description with to-3pn package high voltage,fast speed low collector saturation voltage applications specially intended for operating in industrial applications pinning (see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit buw12 850 v cbo collector-base voltage BUW12A open emitter 1000 v buw12 400 v ceo collector-emitter voltage BUW12A open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 8 a i cm collector current-peak 20 a i b base current 4 a p t total power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.2 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors buw12 BUW12A characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit buw12 400 v ceo(sus) collector-emitter sustaining voltage BUW12A i c =0.1a ; i b =0; l=25mh 450 v v cesat collector-emitter saturation voltage i c =6a; i b =1.2a 1.5 v v besat base-emitter saturation voltage i c =6a; i b =1.2a 1.5 v buw12 v ce =850v; v be =0 i ces collector cut-off current BUW12A v ce =1000v; v be =0 1.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe dc current gain i c =1a ; v ce =5v 15 50 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time i c =6a ;i b1 =-i b2 =1.2a v cc =240v 0.8 s savantic semiconductor product specification 3 silicon npn power transistors buw12 BUW12A package outline fig.2 outline dimensions |
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